Nagashio, Kosuke: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

1

Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance

Nagashio, Kosuke

Journal:

Journal of Materials Research

Year:

2017

Language:

english

File:

PDF, 832 KB

english, 2017

2

Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface

Matsuoka, Ryota, Sakamoto, Ryota, Hoshiko, Ken, Sasaki, Sono, Masunaga, Hiroyasu, Nagashio, Kosuke, Nishihara, Hiroshi

Journal:

Journal of the American Chemical Society

Year:

2017

Language:

english

File:

PDF, 4.01 MB

english, 2017

3

HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Li, Xiuyan, Yajima, Takeaki, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 925 KB

english, 2014

4

SPIE Proceedings [SPIE Lasers and Applications in Science and Engineering - San Jose, Ca (Sunday 25 January 2004)] Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications III - Effect of donors and acceptors on the optical properties of CdGeAs2

Bai, Lihua, Garces, Nelson Y., Xu, Chunchuan, Halliburton, Larry E., Giles, Nancy C., Schunemann, Peter G., Nagashio, Kosuke, Yang, Chunhui, Feigelson, Robert S., Schepler, Kenneth L., Lowenthal, Denn

Year:

2004

Language:

english

File:

PDF, 142 KB

english, 2004

5

Understanding interface properties in 2D heterostructure FETs

Nagashio, Kosuke

Journal:

Semiconductor Science and Technology

Year:

2020

File:

PDF, 2.20 MB

2020

6

Formation of Metastable Rare-Earth Iron Garnet by Splat Quenching

Kosuke Nagashio, Okie Yamaguchi, Taketoshi Hibiya, Kazuhiko Kuribayashi

Journal:

Journal of the American Ceramic Society

Year:

2006

Language:

english

File:

PDF, 343 KB

english, 2006

7

Impacts of oxygen passivation on poly-crystalline germanium thin film transistor

Kabuyanagi, Shoichi, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 852 KB

english, 2014

8

Nucleation behaviour and anomalous eutectic formation in highly undercooled Fe 2 O 3 -La 2 O 3 eutectic melts

Li, Mingjun, Nagashio, Kosuke, Kuribayashi, Kazuhiko

Journal:

Philosophical Magazine

Year:

2003

Language:

english

File:

PDF, 409 KB

english, 2003

9

Formation of Hexagonal Metastable Phases from an Undercooled LuFeO3 Melt in an Atmosphere with Low Oxygen Partial Pressure

M. S. Vijaya Kumar, Kosuke Nagashio, Taketoshi Hibiya, Kazuhiko Kuribayashi

Journal:

Journal of the American Ceramic Society

Year:

2008

Language:

english

File:

PDF, 752 KB

english, 2008

10

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Recent Progress of Germanium Gate Stack Technology

Toriumi, Akira, Lee, Choong Hyun, Tabata, Toshiyuki, Wang, Shengkai, Zhao, Dandan, Nishimura, Tomonori, Kita, Koji, Nagashio, Kosuke

Year:

2012

Language:

english

File:

PDF, 269 KB

english, 2012

11

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers

Kita, Koji, Eika, Atsushi, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Year:

2010

Language:

english

File:

PDF, 451 KB

english, 2010

12

Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

Fang, Nan, Toyoda, Satoshi, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

Advanced Functional Materials

Year:

2019

File:

PDF, 4.78 MB

2019

13

Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium

Lu, Cimang, Lee, Choong Hyun, Zhang, Wenfeng, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 3.32 MB

english, 2014

14

Gap state analysis in electric-field-induced band gap for bilayer graphene

Kanayama, Kaoru, Nagashio, Kosuke

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 2.02 MB

english, 2015

15

Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

Fang, Nan, Toyoda, Satoshi, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

Advanced Functional Materials

Year:

2019

Language:

english

File:

PDF, 4.78 MB

english, 2019

16

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization

Kita, Koji, Lee, Choong Hyun, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Year:

2009

Language:

english

File:

PDF, 1.12 MB

english, 2009

17

Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors

Nagashio, Kosuke, Toriumi, Akira

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 888 KB

english, 2011

18

Simultaneous endoscopic ultrasound-guided hepaticogastrostomy and bridging stenting with partial stent-in-stent method

Maehara, Kosuke, Hijioka, Susumu, Nagashio, Yoshikuni, Ohba, Akihiro, Kanai, Yuya, Okusaka, Takuji, Saito, Yutaka

Journal:

Year:

2020

File:

PDF, 425 KB

2020

19

Microtexture and macrotexture formation in the containerless solidification of undercooled Ni–18.7 at.% Sn eutectic melts

Mingjun Li, Kosuke Nagashio, Takehiko Ishikawa, Shinichi Yoda, Kazuhiko Kuribayashi

Journal:

Acta Materialia

Year:

2005

Language:

english

File:

PDF, 805 KB

english, 2005

20

Containerless solidification of highly undercooled mullite melts: Crystal growth behavior and microstructure formation

Mingjun Li, Kosuke Nagashio, Kazuhiko Kuribayashi

Journal:

Metallurgical and Materials Transactions A

Year:

2002

Language:

english

File:

PDF, 1.34 MB

english, 2002

21

Direct observation of charge transfer region at interfaces in graphene devices

Nagamura, Naoka, Horiba, Koji, Toyoda, Satoshi, Kurosumi, Shodai, Shinohara, Toshihiro, Oshima, Masaharu, Fukidome, Hirokazu, Suemitsu, Maki, Nagashio, Kosuke, Toriumi, Akira

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.04 MB

english, 2013

22

Atomically flat planarization of Ge(100), (110), and (111) surfaces in H 2 annealing

Nishimura, Tomonori, Kabuyanagi, Shoichi, Zhang, Wenfeng, Lee, Choong Hyun, Yajima, Takeaki, Nagashio, Kosuke, Toriumi, Akira

Journal:

Applied Physics Express

Year:

2014

Language:

english

File:

PDF, 701 KB

english, 2014

23

Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack

Lu, Cimang, Hyun Lee, Choong, Zhang, Wenfeng, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 894 KB

english, 2014

24

Electrically inert h -BN/bilayer graphene interface in all-2D-heterostructure FETs

Uwanno, Teerayut, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

ACS Applied Materials & Interfaces

Year:

2018

Language:

english

File:

PDF, 1.29 MB

english, 2018

25

Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS 2 FET

Taniguchi, Koki, Fang, Nan, Nagashio, Kosuke

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.71 MB

english, 2018

26

Microstructure formation and phase selection in the solidification of Al2O3–5 at% SiO2 melts by splat quenching

Li, Mingjun, Nagashio, Kosuke, Kuribayashi, Kazuhiko

Journal:

Journal of Materials Research

Year:

2002

Language:

english

File:

PDF, 362 KB

english, 2002

27

Experimental detection of active defects in few layers MoS 2 through random telegraphic signals analysis observed in its FET characteristics

Fang, Nan, Nagashio, Kosuke, Toriumi, Akira

Journal:

Year:

2016

Language:

english

File:

PDF, 1.82 MB

english, 2016

28

Impact ionization and transport properties of hexagonal boron nitride in a constant-voltage measurement

Hattori, Yoshiaki, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

Physical Review B

Year:

2018

Language:

english

File:

PDF, 1.23 MB

english, 2018

29

Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact

Fukidome, Hirokazu, Kotsugi, Masato, Nagashio, Kosuke, Sato, Ryo, Ohkochi, Takuo, Itoh, Takashi, Toriumi, Akira, Suemitsu, Maki, Kinoshita, Toyohiko

Journal:

Scientific Reports

Year:

2014

Language:

english

File:

PDF, 831 KB

english, 2014

30

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction

Li, Xiuyan, Yajima, Takeaki, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Year:

2014

Language:

english

File:

PDF, 503 KB

english, 2014

31

Observation of Dipole Layer Formed at High- k Dielectrics/SiO 2 Interface with X-ray Photoelectron Spectroscopy

Zhu, Li Qiang, Kita, Koji, Nishimura, Tomonori, Nagashio, Kosuke, Wang, Sheng Kai, Toriumi, Akira

Journal:

Applied Physics Express

Year:

2010

Language:

english

File:

PDF, 305 KB

english, 2010

32

Direct Crystallization of Y3Fe5O12 Garnet by Containerless Solidification Processing

Nagashio, Kosuke, Kuribayashi, Kazuhiko, Takamura, Yuzuru

Journal:

MATERIALS TRANSACTIONS

Year:

2001

File:

PDF, 1.70 MB

2001

33

Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule

Fang, Nan, Nagashio, Kosuke

Journal:

ACS Applied Materials & Interfaces

Year:

2018

Language:

english

File:

PDF, 1.44 MB

english, 2018

34

An investigation of the phase diagram of the Al–Ir binary system

Machiko Ode, Taichi Abe, Hideyuki Murakami, Yoko Yamabe-Mitarai, Toru Hara, Kosuke Nagashio, Cenk Kocer, Hidehiro Onodera

Journal:

Year:

2008

Language:

english

File:

PDF, 1.17 MB

english, 2008

35

Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride / Metal Interface

Hattori, Yoshiaki, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

ACS Applied Materials & Interfaces

Year:

2018

Language:

english

File:

PDF, 943 KB

english, 2018

36

Type-II HfS2/MoS2 Heterojunction Transistors

NETSU, Seiko, KANAZAWA, Toru, UWANNO, Teerayut, AMEMIYA, Tomohiro, NAGASHIO, Kosuke, MIYAMOTO, Yasuyuki

Journal:

IEICE Transactions on Electronics

Year:

2018

Language:

english

File:

PDF, 1.03 MB

english, 2018

37

Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics

Fang, Nan, Otsuka, Keigo, Ishii, Akihiro, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke, Kato, Yuichiro K.

Journal:

Year:

2020

File:

PDF, 657 KB

2020

38

Experimental verification of ribbon formation process in chill-block melt spinning

Kosuke Nagashio, Kazuhiko Kuribayashi

Journal:

Acta Materialia

Year:

2006

Language:

english

File:

PDF, 1.27 MB

english, 2006

39

Microtexture formation of Ni99B1 alloys solidified on an ESL and an EML—a study based on the EBSP technique

Mingjun Li, Takehiko Ishikawa, Kosuke Nagashio, Kazuhiko Kuribayashi, Shinichi Yoda

Journal:

Materials Science and Engineering: A

Year:

2007

Language:

english

File:

PDF, 1.38 MB

english, 2007

40

[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Atomic-scale planarization of Ge (111), (110) and (100) surfaces

Nishimura, Tomonori, Lee, ChoongHyun, Yajima, Takeaki, Nagashio, Kosuke, Toriumi, Akira

Year:

2014

File:

PDF, 765 KB

2014

41

Containerless Solidification and Net Shaping by Splat Quenching of Undercooled Nd2Fe14B Melts

Nagashio, Kosuke, Li, Mingjun, Kuribayashi, Kazuhiko

Journal:

MATERIALS TRANSACTIONS

Year:

2003

Language:

english

File:

PDF, 541 KB

english, 2003

42

10.2320/materia.47.147

Nagashio, Kosuke, Ando, Hitoshi, Yamazaki, Tomohiro, Kuribayashi, Kazuhiko, Jimbo, Itaru, Tajima, Michio

Journal:

Year:

2008

File:

PDF, 3.78 MB

2008

43

Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene

SolÃs-FernÃ¡ndez, Pablo, Terao, Yuri, Kawahara, Kenji, Nishiyama, Wataru, Uwanno, Teerayut, Lin, Yung-Chang, Yamamoto, Keisuke, Nakashima, Hiroshi, Nagashio, Kosuke, Hibino, Hiroki, Suenaga, Kazu, Ag

Journal:

Year:

2020

File:

PDF, 978 KB

2020

44

Grain size increase in pentacene thin films prepared in low-pressure gas ambient

Takamichi Yokoyama, Chang Bum Park, Kosuke Nagashio, Koji Kita, Akira Toriumi

Journal:

Thin Solid Films

Year:

2009

Language:

english

File:

PDF, 548 KB

english, 2009

45

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y 2 O 3

Nishimura, Tomonori, Lee, Choong Hyun, Tabata, Toshiyuki, Wang, Sheng Kai, Nagashio, Kosuke, Kita, Koji, Toriumi, Akira

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 668 KB

english, 2011

46

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks

Kita, Koji, Lee, Choong Hyun, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

Year:

2008

Language:

english

File:

PDF, 385 KB

english, 2008

47

Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks

Tabata, Toshiyuki, Nagashio, Kosuke, Toriumi, Akira

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 403 KB

english, 2012

48

Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride

Hattori, Yoshiaki, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

ACS Applied Materials & Interfaces

Year:

2016

Language:

english

File:

PDF, 1.46 MB

english, 2016

49

Understanding ^|^amp; Controlling the Graphene/SiO2 Interaction

NAGASHIO, Kosuke, TORIUMI, Akira

Journal:

Year:

2012

File:

PDF, 987 KB

2012

50

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p + -WSe 2 Source

He, Junyang, Fang, Nan, Nakamura, Keigo, Ueno, Keiji, Taniguchi, Takashi, Watanabe, Kenji, Nagashio, Kosuke

Journal:

Advanced Electronic Materials

Year:

2018

Language:

english

File:

PDF, 1.70 MB

english, 2018

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски